Strained LiNbO{sub 3}/sapphire heterostructures grown by pulsed laser deposition
Book
·
OSTI ID:490840
- Asahi Chemical Industry Co., Ltd., Fuji, Shizuoka (Japan). Central Lab.
- Osaka Univ., Ibaraki, Osaka (Japan). Inst. of Scientific and Industrial Research
Thin LiNbO{sub 3} films are deposited on (001) sapphire substrates by Ar F pulsed laser ablation. The films are evaluated by X-ray diffraction analysis at various temperatures, as well as high-resolution transmission electron microscopy (TEM). The deposited films are highly epitaxial but that are strained, that is, the a-axis is longer and the c-axis is shorter than those of LiNbO{sub 3} single crystals. X-ray diffraction analysis at deposition temperature, as well as TEM show that the strain is caused by the difference in thermal expansion coefficients between LiNbO{sub 3} and sapphire substrates.
- OSTI ID:
- 490840
- Report Number(s):
- CONF-951155--; ISBN 1-55899-300-2
- Country of Publication:
- United States
- Language:
- English
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