Effect of plasma polymerization film on reducing damage of reactive ion etched silicon substrates with CHF{sub 3}+O{sub 2} plasmas
- NTT LSI Laboratories, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa Pref. 243-01 (Japan)
The damage generated in reactive ion etched Si using CHF{sub 3} added with O{sub 2} is studied using a metal-contamination-free reactor. The measurements of the photoconductive decay curve on the etched Si substrates indicate that carrier recombination lifetime decreases as the flow rate of oxygen increases. Physical analysis x-ray photoelectron spectroscopy and secondary ion mass spectrometry show that plasma polymerized film consisting of carbon and fluorine can be seen on the etched Si substrate in the low oxygen flow rate region. The thickness of the film depends inversely on the oxygen flow rate. It becomes clear that thick plasma polymerization film protects the substrate from ion bombardment that results in damage. {copyright} {ital 1997 American Vacuum Society.}
- OSTI ID:
- 489281
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 1 Vol. 15; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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