Growth of filamentary and platelike silicon nitride crystals under pressure
Journal Article
·
· Crystallography Reports
OSTI ID:486395
- Institute of Spectroscopy, Moscow (Russian Federation); and others
Silicon nitride filamentary and platelike crystals were grown by direct nitration of silicon powder in a gaseous nitrogen-argon mixture with 3:1 ratio under 60 MPa at 1970 K. The crystals started growing when the ratio of synthesized silicon nitride in the final product exceeded 75 wt% (with about 25 wt% Si). The over-whelming majority of filamentary crystals were {beta}-silicon nitride fibers, but {alpha}-silicon nitride fibers were also present. The growth direction was [001]. The platelike particles resembling ribbons had a two-phase structure in which {beta}-silicon nitride was the main component of the particle bulk with small particles of {alpha}-silicon nitride crystals being located along their elongation axes. 10 refs., 4 figs.
- OSTI ID:
- 486395
- Journal Information:
- Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 5 Vol. 40; ISSN CYSTE3
- Country of Publication:
- United States
- Language:
- English
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