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Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells

Technical Report ·
DOI:https://doi.org/10.2172/486170· OSTI ID:486170
; ; ;  [1];  [2]
  1. Phillips-Univ., Marburg (Germany). Fachbereich Physik und Zentrum fuer Materialwissenschaften
  2. Sandia National Labs., Albuquerque, NM (United States)
Quasi-equilibrium excitation dependent optical probe spectra of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k {center_dot} p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSe/ZnSe and CdZnSe/MnZnSSe semiconductor quantum-well systems.
Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Financial Management and Controller, Washington, DC (United States); Department of Defense, Washington, DC (United States); Deutsche Forschungsgemeinschaft, Bonn (Germany)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
486170
Report Number(s):
SAND--97-0694C; CONF-970384--1; ON: DE97007428; CNN: Grant AFOSR 49620-97-1-0002
Country of Publication:
United States
Language:
English

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