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Incorporating many-body effects into modeling of semiconductor lasers and amplifiers

Conference ·
OSTI ID:485996
; ;  [1]
  1. Univ. of Arizona, Tucson, AZ (United States); and others

Major many-body effects that are important for semiconductor laser modeling are summarized. The authors adopt a bottom-up approach to incorporate these many-body effects into a model for semiconductor lasers and amplifiers. The optical susceptibility function ({Chi}) computed from the semiconductor Bloch equations (SBEs) is approximated by a single Lorentzian, or a superposition of a few Lorentzians in the frequency domain. Their approach leads to a set of effective Bloch equations (EBEs). The authors compare this approach with the full microscopic SBEs for the case of pulse propagation. Good agreement between the two is obtained for pulse widths longer than tens of picoseconds.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Financial Management and Controller, Washington, DC (United States); Department of the Air Force, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
485996
Report Number(s):
SAND--97-1118C; CONF-970231--34; ON: DE97006412; CNN: Contract AFSOR F 49620-94-1-0144 DEF
Country of Publication:
United States
Language:
English

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