Saturation induced by picosecond pulses in semiconductor optical amplifiers

Journal Article · Mon Mar 31 23:00:00 EST 1997 · Journal of the Optical Society of America, Part B: Optical Physics

DOI:https://doi.org/10.1364/JOSAB.14.000761· OSTI ID:534467

Mecozzi, A ^[1]

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1. Fondazione Ugo Bordoni, via B. Castiglione 59, 00142 Roma (Italy)

We study the amplification of picosecond pulses in a semiconductor optical amplifier, including the effect of carrier heating and spectral-hole burning. Under simplifying approximations we obtain an analytical expression for the amplifier output to a given picosecond pulse input. The effect of the intraband dynamics becomes important for pulses below a critical pulse width that is related to the {ital K} factor that characterizes the modulation properties of semiconductor lasers. The critical pulse width ranges from a few picoseconds to 20 ps in most cases. {copyright} 1997 Optical Society of America

• OSTI ID: 534467
• Journal Information: Journal of the Optical Society of America, Part B: Optical Physics, Journal Name: Journal of the Optical Society of America, Part B: Optical Physics Journal Issue: 4 Vol. 14; ISSN JOBPDE; ISSN 0740-3224
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
AMPLIFIERS
ELECTRO-OPTICAL EFFECTS
INFRARED SPECTRA
PULSE TECHNIQUES
SEMICONDUCTOR LASERS