PROTON DAMAGE TO SILICON AS A FUNCTION OF PROTON ENERGY.
Technical Report
·
OSTI ID:4838600
- Research Organization:
- National Aeronautics and Space Administration, Langley Station, Va. Langley Research Center
- NSA Number:
- NSA-23-001514
- OSTI ID:
- 4838600
- Report Number(s):
- N--68-27639; NASA-TM-X--60124
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
ANNEALING OF HIGH-ENERGY PROTON DAMAGE IN SILICON.
HIGH-ENERGY PROTON DAMAGE IN SILICON SURFACE-BARRIER DETECTORS.
LOW-ENERGY PROTON DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS.
Technical Report
·
Sat Dec 31 23:00:00 EST 1966
·
OSTI ID:4498786
HIGH-ENERGY PROTON DAMAGE IN SILICON SURFACE-BARRIER DETECTORS.
Technical Report
·
Sun Dec 31 23:00:00 EST 1967
·
OSTI ID:4497486
LOW-ENERGY PROTON DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS.
Technical Report
·
Sat Dec 31 23:00:00 EST 1966
·
OSTI ID:4520100
Related Subjects
CARRIERS
ENERGY
HALL EFFECT
MEV RANGE
MONOCRYSTALS
N33110* --Physics (Solid State)--Radiation Effects
PROTONS
PROTONS/effects on majority carriers in n- and p-type silicon single crystals
energy dependence of
RADIATION EFFECTS
SILICON
SILICON/radiation effects on majority carriers in n- and p-type single crystals of
energy dependence of proton
ENERGY
HALL EFFECT
MEV RANGE
MONOCRYSTALS
N33110* --Physics (Solid State)--Radiation Effects
PROTONS
PROTONS/effects on majority carriers in n- and p-type silicon single crystals
energy dependence of
RADIATION EFFECTS
SILICON
SILICON/radiation effects on majority carriers in n- and p-type single crystals of
energy dependence of proton