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U.S. Department of Energy
Office of Scientific and Technical Information
 

ANNEALING OF HIGH-ENERGY PROTON DAMAGE IN SILICON.

Technical Report ·
OSTI ID:4498786
;
Research Organization:
National Aeronautics and Space Administration, Langley Station, Va. Langley Research Center
NSA Number:
NSA-22-046197
OSTI ID:
4498786
Report Number(s):
N--68-25392; CONF-670334--1; NASA-TM-X--59638
Country of Publication:
Country unknown/Code not available
Language:
English

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Related Subjects

ANNEALING
IRRADIATION
MEV RANGE
N33110* --Physics (Solid State)--Radiation Effects
PROTON BEAMS
PROTONS/effects on n- and p-type silicon at 20, 40, and 158 MeV, annealing of, (E)
RADIATION EFFECTS
SILICON
SILICON/radiation damage in n- and p-type
annealing of proton
(E)