A SUB-MILLIMICROAMPERE CURRENT AMPLIFIER UTILIZING AN UNUSUAL TRANSISTOR EFFECT

Journal Article · Sun Oct 01 00:00:00 EDT 1961 · IRE Trans. on Nuclear Soc.

DOI:https://doi.org/10.1109/TNS2.1961.4315852· OSTI ID:4834055

May, F T; Dandl, R A

Due to a very unusual effect that occurred when certain transistors were operated at low current levels, a direct coupled, transistorized, current amplifier was developed with sensitivity extending below the millimicroampere region of input currents. This amplifier was necessary for the measurement of certain characteristics of the experimental controlled fusion machine, DCX (Direct Current Experiment). Characteristics of the high-gain transistors are presented along with a description of the design and resulting characteristics of a current amplifier with sensitivities of 1/10/sup -8/, 1/10/sup -9/, and 10/10/ sup -10/ volt/amp. A possible explanation of the high-gain effect involving the existence of an N-type inversion layer on the P-type base of the silicon transistors is given. (auth)

• Research Organization: Oak Ridge National Lab., Tenn.
• Sponsoring Organization: USDOE
• NSA Number: NSA-16-001978
• OSTI ID: 4834055
• Journal Information: IRE Trans. on Nuclear Soc., Vol. Vol: NS-8: No. 4; Other Information: Orig. Receipt Date: 31-DEC-62
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ENGINEERING AND EQUIPMENT
AMPLIFIERS
DCX DEVICES
ELECTRIC POTENTIAL
ELECTRICITY
FILMS
PLANNING
SENSITIVITY
SILICON
TRANSISTORS