Current-voltage characteristics of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8-{delta}} in the c-axis direction
Journal Article
·
· Advances in Cryogenic Engineering
OSTI ID:482116
- Central Research Institute of Electric Power Industry, Tokyo (Japan)
- Univ. of Tokyo (Japan); and others
Current-voltage (I-V) characteristics of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystals were measured in the c-axis direction as a function of temperature and magnetic field parallel to the current. In order to eliminate heating effect, a voltage pulse with a width of 0.5 - 1 {mu}s was applied for each I-V point. The authors found an ohmic region far below the gap voltage. The ohmic resistance increased with decreasing temperature and grew 30 times larger at 4.2 K than that at room temperature. Magnetic field strongly suppressed the critical current but did not change this ohmic resistance. These behaviors can be explained by a semiconductive shunt resistance connected in parallel to a stack of Josephson junctions. By applying two-step voltage pulses, the authors observed a hysteretic feature of the intrinsic Josephson junctions. Crystals with different oxygen contents showed a large variation in critical current, normal resistance, the shunt resistance at low temperature and the degree of hysteresis due to a difference in anisotropy ratios. Utilizing the bistability revealed by the hysteretic feature, the Bi2212 crystal can function as a switching device in the c-direction. A natural stack of many junctions will exhibit large response voltage, which is a great advantage for application to power devices.
- OSTI ID:
- 482116
- Report Number(s):
- CONF-950722--
- Journal Information:
- Advances in Cryogenic Engineering, Journal Name: Advances in Cryogenic Engineering Vol. 42B; ISSN 0065-2482; ISSN ACYEAC
- Country of Publication:
- United States
- Language:
- English
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