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Transport properties of Si{sup +} irradiated YBa{sub 2}Cu{sub 3}O{sub y} thin films

Journal Article · · Advances in Cryogenic Engineering
OSTI ID:482115
; ;  [1];  [2]
  1. National Taiwan Normal Univ., Taipei (Taiwan, Province of China)
  2. National Taiwan Univ., Taipei (Taiwan, Province of China); and others
Hall coefficients, magnetic hysteretic loops, and electrical resistivities in magnetic fields for YBa{sub 2}Cu{sub 3}O{sub y} (YBCO) films under irradiation with Si{sup +} were systematically examined in various ranges of temperature to investigate effects of the pinning force and disorder on the transverse Hall voltage near T{sub c}. The incident energy of Si ions was 3 MeV and the fluence {phi}t varied from 1 x 10{sup 12} to 1 x 10{sup 14} cm{sup {minus}2}. Under irradiation with Si{sup +}, the critical current density of irradiated YBCO films derived from M-H curves showed enhancement and the resistive transition in magnetic fields became narrower in Si -irradiated YBCO films. The temperature ranges in which negative Hall coefficients occurred became narrower for a Si{sup +}-irradiated YBCO film that showed a stronger pinning force in magnetic fields; hence the negative Hall coefficient is affected by the pinning ability of YBCO films. The results are discussed.
OSTI ID:
482115
Report Number(s):
CONF-950722--; CNN: Grant NSC83-0212-M003-11; Grant NSC82-0212-M002- 183; Grant NSC83-0511-M002-003
Journal Information:
Advances in Cryogenic Engineering, Journal Name: Advances in Cryogenic Engineering Vol. 42B; ISSN 0065-2482; ISSN ACYEAC
Country of Publication:
United States
Language:
English