Interfacial reactions between AlN substrate and 4-A family elements

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:479276

Du, Y; He, X; Tao, K ^[1]

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1. Tsinghua Univ., Beijing (China). Dept. of Materials Science and Engineering

Aluminum Nitride (AlN) has been taken into great consideration recently as a promising material in microelectronic packaging. Interfacial reactions between AlN substrate and 4A-family elements including Ti, Zr and Hf were studied. The samples were prepared by Physical Vapor Deposition and annealed at different temperatures from 200 C to 800 C. X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) were employed to detect the compounds formed at the interfaces between them. For Ti/AlN system, when the samples were annealed from 600 C to 800 C for 1 hour, it was found from XRD patterns that TiAl{sub 3}, TiN, and Ti{sub 4}N{sub 3{minus}x} including Ti{sub 2}N were formed at Ti/AlN interface. With the temperature increasing, the intensities of Ti, TiN(200), Ti{sub 2}N and Ti{sub 4}N{sub 3{minus}x} diffraction peaks decreased while that of TiAl{sub 3} and TiN(111) increased. For Zr/AlN system, it was found that the reactions between Zr and AlN resulted in the formation of Al{sub 3}Zr at about 300 C and Al{sub 2}Zr at about 500 C. According to RBS spectra, it can be assumed that Al{sub 3}Zr was the direct product by the reaction between AlN and Zr and Al{sub 2}Zr was formed by the reaction between Al{sub 3}Zr and Zr. For Hf/AlN system, however, even the sample was annealed at 800 C, no compound resulted from interfacial reactions was detected.

• OSTI ID: 479276
• Report Number(s): CONF-951155--; ISBN 1-55899-301-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
ANNEALING
COMPOSITE MATERIALS
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
HAFNIUM
INTERFACES
INTERMETALLIC COMPOUNDS
MICROSTRUCTURE
PHYSICAL VAPOR DEPOSITION
THIN FILMS
TITANIUM
ZIRCONIUM