Heat transfer in excimer laser melting of thin polysilicon layers

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · Journal of Heat Transfer

DOI:https://doi.org/10.1115/1.2822634· OSTI ID:478475

Xu, X; Grigoropoulos, C P ^[1]; Russo, R E ^[2]

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1. Univ. of California, Berkeley, CA (United States)
2. Lawrence Berkeley Lab., CA (United States)

A pulsed KrF excimer laser with nanosecond pulse duration is used for surface melting of thin polycrystalline silicon films. The velocity of the moving phase boundary during melting and solidification, the maximum melting depth, as well as the melting duration are experimentally determined by combined optical and electrical methods. A melting interface tracking model is used to calculate the melt front propagation and the transient temperature field in the semiconductor. A phase-change model, which allows the occurrence of melting and solidification at temperatures other than the equilibrium melting temperature, is employed in the numerical calculation. The effect of interfacial superheating/undercooling is discussed. 23 refs., 12 figs.

• Sponsoring Organization: USDOE
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 478475
• Journal Information: Journal of Heat Transfer, Journal Name: Journal of Heat Transfer Journal Issue: 3 Vol. 117; ISSN 0022-1481; ISSN JHTRAO
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
66 PHYSICS
KRYPTON FLUORIDE LASERS
LASER RADIATION
MELTING
RADIANT HEAT TRANSFER
SILICON
SUPERLATTICES
TEMPERATURE GRADIENTS