Modeling of nonequilibrium melting and solidification in laser-irradiated materials

Journal Article · Fri Aug 15 04:00:00 EDT 1986 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.34.2606· OSTI ID:5317470

Wood, R F; Geist, G A

A computational model has been developed for treating various aspects of the complex melting and solidification behavior observed in pulsed-laser-irradiated materials. An important feature of the modeling is the capability of allowing nonequilibrium melting and solidification to occur at temperatures other than the thermodynamic phase-change temperatures. As a result, interfacial undercooling and overheating can be introduced and various types of nucleation events can be simulated. Calculations for pulsed-laser-irradiated silicon containing amorphous layers have shown a wide variety of behavior, including the formation and propagation of multiple phase fronts and buried molten layers. Although originally developed as a tool for studying problems arising in the field of laser annealing of semiconductors, the approach used in the modeling should be useful in treating many types of systems in which ultrarapid phase change and nucleation phenomena play important roles.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5317470
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 34:4; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

656000* -- Condensed Matter Physics
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
COMPUTERIZED SIMULATION
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY TRANSFER
HEAT TRANSFER
INTERFACES
IRRADIATION
LASER RADIATION
LAYERS
MATERIALS
MATHEMATICAL MODELS
MELTING
NUCLEATION
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
PULSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SIMULATION
SOLIDIFICATION