Ion beam reactive sputter-deposition of silicon and zirconium oxides
- Univ. of Salford (United Kingdom)
- MATS UK, Liverpool (United Kingdom)
Oxides of silicon and zirconium have been deposited onto silicon, carbon and aluminum substrates by reactive sputtering using a 1 keV argon ion beam and a controlled partial pressure of oxygen. Using RBS, film composition was determined for a given partial pressure of oxygen and different Si or Zr deposition rates. There is evidence of retained argon in the film which is primarily due to argon ions reflected from the sputtered target. Cross-sectional TEM was used to examine the film microstructure and morphology. Both silica films and sub-stoichiometric zirconia films were found to be amorphous, whereas stoichiometric zirconia films were found to be polycrystalline with grain sizes in the range 10--20 nm. A model has been developed to predict the composition of deposited films.
- OSTI ID:
- 477423
- Report Number(s):
- CONF-951155-; ISBN 1-55899-299-5; TRN: 97:009428
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Ion-solid interactions for materials modification and processing; Poker, D.B. [ed.] [Oak Ridge National Lab., TN (United States)]; Ila, D. [ed.] [Alabama A and M Univ., Normal, AL (United States)]; Cheng, Y.T. [ed.] [General Motors Corp., Warren, MI (United States)]; Harriott, L.R. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Sigmon, T.W. [ed.] [Arizona State Univ., Tempe, AZ (United States)]; PB: 923 p.; Materials Research Society symposium proceedings, Volume 396
- Country of Publication:
- United States
- Language:
- English
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