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Title: The effects of machine parameters on residual stress determined using micro-Raman spectroscopy

Technical Report ·
DOI:https://doi.org/10.2172/476641· OSTI ID:476641

The effects of machine parameters on residual stresses in single point diamond turned silicon and germanium have been investigated using micro-Raman spectroscopy. Residual stresses were sampled across ductile feed cuts in < 100 > silicon and germanium which were single point diamond turned using a variety of feed rates, rake angles and clearance angles. High spatial resolution micro-Raman spectra (1{mu}m spot) were obtained in regions of ductile cutting where no visible surface damage was present. The use of both 514-5nm and 488.0nm excitation wavelengths, by virtue of their differing characteristic penetration depths in the materials, allowed determinations of stress profiles as a function of depth into the sample. Previous discussions have demonstrated that such Raman spectra will exhibit asymmetrically broadened peaks which are characteristic of the superposition of a continuum of Raman scatterers from the various depths probed. Depth profiles of residual stress were obtained using computer deconvolution of the resulting asymmetrically broadened raman spectra.

Research Organization:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); North Carolina State Univ., Raleigh, NC (United States)
OSTI ID:
476641
Report Number(s):
LA-SUB-93-81; ON: DE97003578; TRN: 97:002288-0017
Resource Relation:
Other Information: PBD: Dec 1988; Related Information: Is Part Of Precision Engineering Center. 1988 Annual report, Volume VI; Dow, T. [ed.]; Fornaro, R.; Keltie, R.; Paesler, M. [and others]; PB: 367 p.
Country of Publication:
United States
Language:
English