THEORY OF POINT DEFECT ANNEALING IN METALS
The kinetics of the annealing of point defects, either by migration to sinks or by recombination, is complicated by the occurrence of a variety of simultaneous reactions. An extensive theoretical study of anneallng processes is in progress based on the isolation and combination of simple kinetic steps. When analytic solutions could not be found, computer solutions were used to obtain useful approximations and to determine their regions of validity. Two migration reaction schemes were studied: the simultaneous annealing of single and di- vacancies and the annealing of single vacancies with impurity trapping. Three recombination reactions were investigated: vacancy-interstitial annihilation with interstitial migration to sinks, di-interstitial formation, and interstitial trapping at impurities. (auth)
- Research Organization:
- Brookhaven National Lab., Upton, N.Y.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AT(30-2)-GEN-16
- NSA Number:
- NSA-17-001922
- OSTI ID:
- 4763384
- Report Number(s):
- BNL-6322
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effective diffusion coefficients of point defects in impure materials
Annealing study of electron irradiation-induced defects in GaAs
Point defect movement and annealing in collision cascades
Technical Report
·
Fri Feb 29 23:00:00 EST 1980
·
OSTI ID:5489974
Annealing study of electron irradiation-induced defects in GaAs
Journal Article
·
Fri Aug 01 00:00:00 EDT 1980
· J. Appl. Phys.; (United States)
·
OSTI ID:5184988
Point defect movement and annealing in collision cascades
Journal Article
·
Fri Aug 01 00:00:00 EDT 1997
· Physical Review, B: Condensed Matter
·
OSTI ID:528070