Point defect movement and annealing in collision cascades

Journal Article · Fri Aug 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.2421· OSTI ID:528070

Nordlund, K; Averback, R S ^[1]

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1. Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

The effect of collision cascades on preexisting point defects in crystalline materials was studied by simulating 5 keV collision cascades in gold, copper, aluminum, platinum, and silicon. The results indicate that collision cascades do not significantly affect interstitials or vacancies outside the liquid core of the cascade, although in the fcc metals the heating of the crystal due to the cascade causes some thermal migration of the interstitials. Within the liquid cascade core, both interstitials and vacancies move towards the center of the molten region when it resolidifies and recombine or cluster there. At elevated temperatures, random jumps of interstitials during the thermal-spike phase can cause significant additional trapping of interstitials in the liquid. In contrast to the annealing effects of preexisting damage in the fcc metals, in silicon the amount of new damage created by a cascade is roughly independent of the number of initial point defects. The difference is attributed to the nature of the bonding in the materials. {copyright} {ital 1997} {ital The American Physical Society}

• Research Organization: University of Illinois
• DOE Contract Number: FG02-91ER45439
• OSTI ID: 528070
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 5 Vol. 56; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ANNEALING
CHEMICAL BONDS
COPPER
DAMAGE
GOLD
INTERSTITIALS
KEV RANGE 01-10
PHYSICAL RADIATION EFFECTS
PLATINUM
POINT DEFECTS
SILICON
VACANCIES