Patterning of GaN in high-density Cl{sub 2}- and BCl{sub 3}-based plasmas
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Hewlett-Packard Labs., Palo Alto, CA (United States)
Fabrication of group-III nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropic profiles, smooth surface morphologies, etch rates often exceeding 1 {micro}m/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as {approximately}1.3 {micro}m/min have been reported in ECR generated ICl plasmas at {minus}150 V dc-bias. In this study, the authors report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl{sub 2}- and BCl{sub 3}-based plasma chemistries.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 474932
- Report Number(s):
- SAND--97-1038C; CONF-970302--5; ON: DE97005366
- Country of Publication:
- United States
- Language:
- English
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