Chlorine-based plasma etching of GaN
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Plasma-Therm, Inc., Saint Petersburg, FL (United States)
The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {micro}m/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved GaN etch quality over more conventional reactive ion etch (RIE) systems.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 432987
- Report Number(s):
- SAND--97-0002C; CONF-961202--51; ON: DE97001909
- Country of Publication:
- United States
- Language:
- English
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