PHASE QUILIBRIA IN THE BORON CARBIDE-SILICON CARBIDE SYSTEM
Technical Report
·
OSTI ID:4727805
The boron carbide -silicon carbide system is quasibinary and contains a eutectic of composition 70 450 deg C in a 2 wt% B/sub 4/C and 30 450 deg C in a 2 wt% SiC at a temperature of 2300 450 deg C in a 20 un. Concent 85% C. The solid solubility of both B/sub 4/C in SiC and SiC in B/sub 4/C is <2 wt% at this temperature, based on metallographic and x-ray analyses. The SiC corresponds to the hexagonal ( alpha ) allotrope when the compositions contain >50 wt% SiC. The cubic ( BETA ) form of SiC is stabilized in compositions that contain <50 wt% of SiC. (auth)
- Research Organization:
- Knolls Atomic Power Lab., Schenectady, N.Y.
- DOE Contract Number:
- W-31-109-ENG-52
- NSA Number:
- NSA-17-021668
- OSTI ID:
- 4727805
- Report Number(s):
- KAPL-2216
- Country of Publication:
- United States
- Language:
- English
Similar Records
THE EQUILIBRIUM PHASE DIAGRAM, NIOBIUM-ALUMINUM. Final Report
CERAMICS RESEARCH AND DEVELOPMENT OPERATION QUARTERLY REPORT, OCTOBER- DECEMBER 1962
CONSTITUTION DIAGRAM OF In-Se ALLOYS
Technical Report
·
Sun Mar 31 23:00:00 EST 1963
·
OSTI ID:4727163
CERAMICS RESEARCH AND DEVELOPMENT OPERATION QUARTERLY REPORT, OCTOBER- DECEMBER 1962
Technical Report
·
Wed Oct 30 23:00:00 EST 1963
·
OSTI ID:4712412
CONSTITUTION DIAGRAM OF In-Se ALLOYS
Journal Article
·
Mon Dec 31 23:00:00 EST 1962
· Zh. Neorgan. Khim.
·
OSTI ID:4727093