Diffusion Length Measurement by Means of Ionizing Radiation
Penetrating radiation in the form of high-energy electrons, heavy particles, and gamma rays may be used to determine minority-carrier diffusion lengths in semiconductor materials containing junctions, by measuring the radiation-induced short-circuit current. The electronbeam method yields an accurate absolute determination of diffusion length once the carrier-generation rate as a function of depth in the material is measured. A series of such experiments is described for silicon solar cells utilizing eiectrons ranging in energy from 0.61 to 1.16 Mev. A resultant maximum generation rate of 2.25 x 10/ sup 6/ plus or minus 5 per cent carriers/cm/incident 1-Mev electron is obtnined at a depth of 0.096 g/cm/sup 2/. Measurements with 16.8- and 130-Mev protons and Co/sup 60/ gamma rays are found to be in agreement with the electron-beam measurements. An experimental arrangement is described thnt yields rapid and accurate diffusion-length measurements of solar cells under conditions in which radiation damage is negligible. (auth)
- Research Organization:
- Originating Research Org. not identified
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-17-008963
- OSTI ID:
- 4721322
- Journal Information:
- Bell System Technical Journal, Journal Name: Bell System Technical Journal Journal Issue: 5 Vol. 41; ISSN 0005-8580
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
CURRENTS
CYLINDERS
DIFFUSION LENGTH
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ELECTRONS
ENERGY
FLUID FLOW
GAMMA RADIATION
GASES
IONIZATION
MAGNETIC FIELDS
MEASURED VALUES
MEV RANGE
PHOTOELECTRIC CELLS
PHYSICS
PROTONS
RADIATION INJURIES
RADIATIONS
SEMICONDUCTORS
SILICON
SOLAR CELLS
STABILITY
SUN