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Electron irradiation damage in N/sup +/-P InP solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6076187
Electron (1 MeV) irradiation damage in shallow n/sup +/-p InP solar cells has been studied. An n/sup +/-p junction was formed by thermal diffusion of sulphur into a p-type substrate. Minority carrier diffusion length and carrier concentration studies were carried out for defects induced by electron irradiation in InP solar cells. It has been found that the InP solar cell has a higher resistance to radiation degradation than a GaAs solar cell. A cell using a high carrier concentration (order of 10/sup 18/ cm/sup -3/) substrate is more radiation resistant than that with a low carrier concentration (10/sup 15/ about 10/sup 16/ cm/sup -3/) substrate. Electron irradiation damage dynamics during annealing have also been studied. Damage recovery starts from as low as 70/sup 0/C.
Research Organization:
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibaraki
OSTI ID:
6076187
Report Number(s):
CONF-840561-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English