Electron irradiation damage in N/sup +/-P InP solar cells
Conference
·
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6076187
Electron (1 MeV) irradiation damage in shallow n/sup +/-p InP solar cells has been studied. An n/sup +/-p junction was formed by thermal diffusion of sulphur into a p-type substrate. Minority carrier diffusion length and carrier concentration studies were carried out for defects induced by electron irradiation in InP solar cells. It has been found that the InP solar cell has a higher resistance to radiation degradation than a GaAs solar cell. A cell using a high carrier concentration (order of 10/sup 18/ cm/sup -3/) substrate is more radiation resistant than that with a low carrier concentration (10/sup 15/ about 10/sup 16/ cm/sup -3/) substrate. Electron irradiation damage dynamics during annealing have also been studied. Damage recovery starts from as low as 70/sup 0/C.
- Research Organization:
- Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokai, Ibaraki
- OSTI ID:
- 6076187
- Report Number(s):
- CONF-840561-
- Conference Information:
- Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation damage in InP single crystals and solar cells
Electron and proton damage coefficients for heteroepitaxial InP solar cells
Radiation damage of GaAs thin-film solar cells on Si substrates
Journal Article
·
Wed Mar 14 23:00:00 EST 1984
· J. Appl. Phys.; (United States)
·
OSTI ID:5266401
Electron and proton damage coefficients for heteroepitaxial InP solar cells
Conference
·
Fri Dec 30 23:00:00 EST 1994
·
OSTI ID:191197
Radiation damage of GaAs thin-film solar cells on Si substrates
Journal Article
·
Wed Jan 14 23:00:00 EST 1987
· J. Appl. Phys.; (United States)
·
OSTI ID:6972388
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BEAMS
COMPARATIVE EVALUATIONS
DEFECTS
DIFFUSION
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
HEAT TREATMENTS
INDIUM PHOSPHIDE SOLAR CELLS
IRRADIATION
JUNCTIONS
LEPTON BEAMS
MATERIALS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
TEMPERATURE EFFECTS
THERMAL CONDUCTIVITY
THERMAL DIFFUSION
THERMAL RADIATION
THERMODYNAMIC PROPERTIES
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BEAMS
COMPARATIVE EVALUATIONS
DEFECTS
DIFFUSION
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
HEAT TREATMENTS
INDIUM PHOSPHIDE SOLAR CELLS
IRRADIATION
JUNCTIONS
LEPTON BEAMS
MATERIALS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
TEMPERATURE EFFECTS
THERMAL CONDUCTIVITY
THERMAL DIFFUSION
THERMAL RADIATION
THERMODYNAMIC PROPERTIES