LOW TEMPERATURE RESISTIVITY OF SELF-IRRADIATED PLUTONIUM

Journal Article · Fri Mar 01 04:00:00 EST 1963 · Cryogenics (England)

DOI:https://doi.org/10.1016/0011-2275(63)90076-6· OSTI ID:4716557

Lee, J A; Mendelssohn, K; Wigley, D A

Strongly temperature dependent resistance of alphaplutonium becomes largely temperature independent after reaching a saturated state of self-damage at st run. Concent 5 un. Concent 85% K. The new resistivity is higher than the original one at low temperatures but lower than the undamaged value at st run. Concent 90 un. Concent 85% K. Annealing restores the original resistivity curve. Radiation abolishes the mechanism responsible for the strong dependence of resistivity on temperature. (C.E.S.)

• Research Organization: Atomic Energy Research Establishment, Harwell, Berks, Eng.
• NSA Number: NSA-17-020519
• OSTI ID: 4716557
• Journal Information: Cryogenics (England), Journal Name: Cryogenics (England) Vol. Vol: 3; ISSN CRYOA
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ALLOTROPY
ANNEALING
DIAGRAMS
ELECTRIC CONDUCTIVITY
IRRADIATION
LOW TEMPERATURE
METALS, CERAMICS, AND OTHER MATERIALS
PLUTONIUM
PLUTONIUM-ALPHA
RADIATION EFFECTS