Low temperature MOCVD growth of V/VI materials via a Me{sub 3}SiNMe{sub 2} elimination reaction

Book · Tue Dec 31 04:00:00 UTC 1996

OSTI ID:470917

Groshens, T J; Gedridge, Jr, R W; Lowe-Ma, C K; Cole, T ^[1]

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1. Naval Air Warfare Center, China Lake, CA (United States)

The V/VI semiconducting compounds are the most efficient materials for thermoelectric cooling (TEC) devices found to date. Films of M{sub 2}Te{sub 3} (M = Sb, Bi) were grown on Si(111) cut 4{degree} off-axis and GaAs(100) substrates between 25 C and 150 C in a low pressure MOCVD reactor via a novel N,N-dimethylaminotrimethylsilane (Me{sub 3}SiNMe{sub 2}) elimination reaction using M(NMe{sub 2}){sub 3} (M = Sb, Bi) and (Me{sub 3}Si){sub 2}Te. X-ray diffraction data indicated that the crystallinity and crystallite orientation of the resulting films were dependent on the substrate structure and growth temperature. Amorphous films were deposited below 50 C. Films deposited at 75 C for Sb{sub 2}Te{sub 3} and 125 C for Bi{sub 2}Te{sub 3} were highly oriented with the (015) reflection plane parallel to the substrate surface. Films of Sb{sub 2}Te{sub 3} deposited at 150 C were highly oriented with the (00{ell}) reflection planes parallel to the substrate surface. The electrical properties and presumably the composition of Bi{sub 2}Te{sub 3} films deposited on Kapton was independent of the V/VI precursor ratio used. This unique deposition reaction provides an alternative route to prepare group V chalcogenide materials which have potential applications in solar cells, reversible optical storage, and thermoelectrics.

• Sponsoring Organization: Office of Naval Research, Washington, DC (United States)
• OSTI ID: 470917
• Report Number(s): CONF-951155--; ISBN 1-55899-313-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY TELLURIDES
BISMUTH TELLURIDES
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
ORGANOMETALLIC COMPOUNDS
ORIENTATION
SILICON
SOLAR CELLS
SUBSTRATES
THERMOELECTRIC CONVERSION
THIN FILMS