Recent progress in GaN based field effect transistors
Book
·
OSTI ID:470881
- APA Inc., Blaine, MN (United States)
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Electrical Engineering
Most types of GaN based Field Effect Transistors--MESFETS, MISFETS, heterostructure FETs (HFETs), and Doped Channel HFETs (DC-HFETs) have demonstrated a good performance at both room temperature and elevated temperatures. The DC-HFETs demonstrated the best direct current and microwave characteristics among all wide band gap semiconductor devices because of excellent transport properties of two dimensional electron gas at the AlGaN/GaN heterointerface and a large sheet carrier concentration in the device channel. Other advantages of GaN-based materials for FET applications include a very high breakdown field, a very high saturation field, a high peak velocity, a large conduction and valence band discontinuities at the AlN-GaN heterointerface, and a reasonable thermal conductivity (comparable to that of Si). In this paper, the authors review their recent results obtained for different types of GaN-based transistors.
- Sponsoring Organization:
- Office of Naval Research, Washington, DC (United States); Department of the Army, Washington, DC (United States)
- OSTI ID:
- 470881
- Report Number(s):
- CONF-951155--; ISBN 1-55899-313-4
- Country of Publication:
- United States
- Language:
- English
Similar Records
Gallium nitride junction field effect transistors for high-temperature operation
Characterization of AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with Variable Thickness Channel and Substrate Type
Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
Conference
·
Sat Jun 01 00:00:00 EDT 1996
·
OSTI ID:244677
Characterization of AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with Variable Thickness Channel and Substrate Type
Journal Article
·
Wed Jul 07 00:00:00 EDT 2010
· AIP Conference Proceedings
·
OSTI ID:21415274
Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
Journal Article
·
Mon Aug 25 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22310982