TEM characterization of LPCVD Ta{sub 2}O{sub 5} films fabricated by pre-deposition rapid thermal nitridation
- LG Semicon, Co., Ltd., Cheongju (Korea, Republic of); and others
Chemical vapor deposited tantalum pentoxide (Ta{sub 2}O{sub 5}) films have been a promising dielectric material for a storage capacitor in high-density DRAM with three-dimensional cell architecture, due to its higher dielectric constant than that of conventional SiO{sub 2} or Si{sub 3}N{sub 4}/SiO{sub 2} films. The effective dielectric constant of Ta{sub 2}O{sub 5} films is influenced by the thickness of interfacial lower-dielectric SiO{sub 2} layer which could be a native oxide or a thermally grown oxide during deposition and annealing. In general, the capacitor with the thinner SiO{sub 2} layer has the larger effective dielectric constant. In this work, the capacitor structure films prepared with or without RTN treatment, which was performed to inhibit the growth of SiO{sub 2}, were studied by various TEM techniques.
- OSTI ID:
- 468943
- Report Number(s):
- CONF-960877--
- Country of Publication:
- United States
- Language:
- English
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