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TEM characterization of CMR thin film on [001] SrTiO{sub 3} substrate

Conference ·
OSTI ID:468878
;  [1];  [2]
  1. Northwestern Univ., Evanston, IL (United States)
  2. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)

Due to its potential magnetic device application, giant/colossal magnetoresistant (GMR or CMR) material, (bulk material as well as thin film), have been under intense investigation in recent years. In the bulk material, the changes of the resistivity under 4T magnetic field is about 80% at the metal-insulate transition temperature for La{sub 0.7}Ca{sub 0.3}MnO{sub 3} (LCMO). In 1994, S. Jin et al reported thousandfold change in resistivity in magnetoresistive La-Ca-Mn-O films on a LaAlO{sub 3} substrate. It is suspected that such a large magnetoresistivity change in the thin film is due to the defect structure in the epitaxially grown thin film. In this report, we study the structure as well as the chemical composition of an epitaxially grown La{sub 0.7}Ca{sub 0.3}MnO{sub 3} (LCMO) thin film by transmission electron microscopy. The thin film on [001] SrTiO{sub 3} single crystal substrate was prepared by laser ablation. The resistivity measurement of the film shows 54% resistivity changes at the metal-insulator transition temperature under 4T magnetic field.

OSTI ID:
468878
Report Number(s):
CONF-960877--; CNN: Contract DMR 91-20000
Country of Publication:
United States
Language:
English