Sputtering Yields of Single Crystals Bombarded by 1- to 10-keV Ar+ Ions
Journal Article
·
· Journal of Applied Physics
The sputtering yield S, in atoms/ion, was measured for Cu and Ag single crystals bombarded at normal incidence by 1- to 10-kev Ar+ ions. Yields of the three low-index planes (110), (100), and (111) for Cu and Ag crystals were measured as well as that of a Cu (311) plane. In addition a yield curve of a Cu (100) crystal bombarded in a [111] direction was measured. The yields were obtained by a weight loss method using ion beam techniques, The yields are strongly dependent on crystalline orientation showing a steep rise with energy, a maximum, which appears at an energy depending on the plane being bombarded, and a slow decrease with ion energy above the maximum. A simple theory is presented which accounts reasonably well for the energy dependence of the sputtering yield in terms of crystalline opacity and the momentum of the incident ion.
- Research Organization:
- General Dynamics/Astronautics, San Diego, Calif.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-17-041598
- OSTI ID:
- 4686642
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 34; ISSN JAPIAU; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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