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Sputtering Yields of Single Crystals Bombarded by 1- to 10-keV Ar+ Ions

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1729175· OSTI ID:4686642
The sputtering yield S, in atoms/ion, was measured for Cu and Ag single crystals bombarded at normal incidence by 1- to 10-kev Ar+ ions. Yields of the three low-index planes (110), (100), and (111) for Cu and Ag crystals were measured as well as that of a Cu (311) plane. In addition a yield curve of a Cu (100) crystal bombarded in a [111] direction was measured. The yields were obtained by a weight loss method using ion beam techniques, The yields are strongly dependent on crystalline orientation showing a steep rise with energy, a maximum, which appears at an energy depending on the plane being bombarded, and a slow decrease with ion energy above the maximum. A simple theory is presented which accounts reasonably well for the energy dependence of the sputtering yield in terms of crystalline opacity and the momentum of the incident ion.
Research Organization:
General Dynamics/Astronautics, San Diego, Calif.
Sponsoring Organization:
USDOE
NSA Number:
NSA-17-041598
OSTI ID:
4686642
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 34; ISSN JAPIAU; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
Country unknown/Code not available
Language:
English

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