The oxygen deficiency effect of VO{sub 2} thin films prepared by laser ablation
Journal Article
·
· Journal of Materials Research
- Second Research Center, TRDI, Japan Defense Agency, 1-2-24 Ikejiri, Setagaya, Tokyo (Japan)
Vanadium dioxide thin films (VO{sub 2}) have been deposited by laser ablation. The temperature dependence of resistivity and temperature coefficient of resistance (TCR) for each deposition condition were investigated. It was clarified that the TCR at room temperature (RT) can be optimized by controlling the oxygen pressure introduced during deposition as the deposition parameter. In the result, larger TCR{close_quote}s at RT were observed for the oxygen deficient condition of VO{sub 2} than for oxygen-richer samples. Obtained TCR values were 0.072/K and 0.045/K at 25{degree}C for VO{sub 2} thin films deposited onto R-cut sapphire and SiO{sub 2}/Si, respectively. {copyright} {ital 1997 Materials Research Society.}
- OSTI ID:
- 467272
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 2 Vol. 12; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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