A metal-insulator transition study of VO2 thin films grown on sapphire substrates
- Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Dept. of Mechanical Engineering
- Stony Brook Univ., NY (United States). Dept. of Mechanical Engineering
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidation condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States); Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Science Foundation (NSF)
- Grant/Contract Number:
- SC0012704; IDBR 1152415
- OSTI ID:
- 1425083
- Report Number(s):
- BNL-203255-2018-JAAM; TRN: US1802037
- Journal Information:
- Journal of Applied Physics, Vol. 122, Issue 23; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Synthesis of phase pure vanadium dioxide (VO 2 ) thin film by reactive pulsed laser deposition
|
journal | October 2018 |
Asymmetric hysteresis in vanadium dioxide thin films
|
journal | January 2019 |
Similar Records
The finite size effect on the metal-insulator transition of MOCVD grown VO{sub 2} films
The finite size effect on the metal-insulator transition of MOCVD grown VO sub 2 films