The finite size effect on the metal-insulator transition of MOCVD grown VO{sub 2} films
We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Korea Science and Engineering Foundation (Korea, Republic of)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 10117901
- Report Number(s):
- ANL/CP--73695; CONF-911202--44; ON: DE92006969
- Country of Publication:
- United States
- Language:
- English
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