ON DEFECTS INTRODUCED INTO SILICON BY FAST ELECTRON AND NEUTRON IRRADIATION
Journal Article
·
· J. Phys. Soc. Japan
OSTI ID:4659205
Photoconductivity measurements on Si single crystals irradiated by electrons and neutrons showed that the deep energy levels system in both cases is similar. Centers with deep levels were generated as a result of a primary process, presumably Frenkel pairs generation, and subsequent point defects migration. New energy levels not resolved by other methods were also observed. (auth)
- Research Organization:
- Lebedev Inst. of Physics, Moscow
- NSA Number:
- NSA-17-037608
- OSTI ID:
- 4659205
- Journal Information:
- J. Phys. Soc. Japan, Vol. Vol: 18: Suppl. III; Other Information: Orig. Receipt Date: 31-DEC-63
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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· Journal of Applied Physics (U.S.)
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Fri Jan 01 00:00:00 EST 1982
·
OSTI ID:4659205