Defect distribution in low-temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
The depth distribution of open-volume defects has been studied in Si(100) crystals grown by molecular beam epitaxy at 300 {degree}C by the variable-energy monoenergetic positron beam technique combined with well-controlled chemical etching. This procedure gave a 10 nm depth resolution which is a significant improvement over the inherent depth resolving power of the positron beam technique. The epitaxial layer was found to grow defect-free up to 80 nm, from the interface, where small vacancy clusters, larger than divacancies, appear. The defect density then sharply increases toward the film surface. The result clearly shows that the nucleation of small open-volume defects is a precursor state to the breakdown of epitaxy and to the evolution of an amorphous film.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 46412
- Journal Information:
- Applied Physics Letters, Vol. 66, Issue 21; Other Information: PBD: 22 May 1995
- Country of Publication:
- United States
- Language:
- English
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