CuInS{sub 2} thin film growth monitoring by {ital in situ} electric conductivity measurements
- Hahn-Meitner Institut, Abteilung Grenzflaechen, Glienicker Strasse 100, 14109 Berlin (Germany)
The growth of CuInS{sub 2} thin films by coevaporation has been monitored by {ital in situ} electrical conductivity measurements. Films with different cation ratio In/(In+Cu) were investigated. During the controlled cool-down period we obtain conductivity versus temperature data which are completed {ital ex situ} in the low-temperature region. The formation of the semimetallic CuS phase in Cu-rich films is found during the cool-down period at a substrate temperature of about 450 K. For In-rich films the dominance of charged grain boundary states is discussed. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 463493
- Journal Information:
- Journal of Applied Physics, Vol. 81, Issue 2; Other Information: PBD: Jan 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical properties of coevaporated CuInS{sub 2} films by in-situ conductivity measurements
Influence of the cooling rate on the electrical conductivity of coevaporated CuInS{sub 2} thin films
Morphology of precursors and CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} thin films prepared by a two-stage selenization process
Book
·
Tue Dec 31 00:00:00 EST 1996
·
OSTI ID:463493
+2 more
Influence of the cooling rate on the electrical conductivity of coevaporated CuInS{sub 2} thin films
Journal Article
·
Tue Apr 01 00:00:00 EST 1997
· Journal of Applied Physics
·
OSTI ID:463493
Morphology of precursors and CuIn{sub 1{minus}{ital x}}Ga{sub {ital x}}Se{sub 2} thin films prepared by a two-stage selenization process
Journal Article
·
Mon May 01 00:00:00 EDT 1995
· Journal of Vacuum Science and Technology, A
·
OSTI ID:463493