Deposition of polycrystalline {beta}-SiC films on Si substrates at room temperature
- Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan, Republic of (China)
- Department of Chemical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan, Republic of (China)
- United Microelectronics Corporation, Science-Based Industrial Park, Hsinchu, Taiwan, Republic of (China)
Polycrystalline {beta}-SiC, with grain size up to 1500 {Angstrom}, has been room-temperature-deposited on Si substrates by electron cyclotron resonance chemical vapor deposition. Microwave power and the hydrogen carrier gas are the key parameters to lower the deposition temperature. According to the results of the cross-sectional transmission electron microscopy, the grain size appeared to be in the same scale as that deposited at 500{degree}C while a large amount of plasma-induced defects were observed in the Si substrate for the room-temperature-deposited samples. Hence, a CH{sub 4}-plasma treatment prior to the {beta}-SiC film growth was adopted, forming a SiC-like interfacial layer to suppress the substrate damages. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 463424
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 2; Other Information: PBD: Jan 1997
- Country of Publication:
- United States
- Language:
- English
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