0.5 {mu}m E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant
A doped-channel heterostructure field effect transistor (H-FET) technology has been developed with self-aligned refractory gate processing and using both enhancement- and depletion-mode transistors. D-HFET devices are obtained with a threshold voltage adjust implant into material designed for E-HFET operation. Both E- and D-HFETs utilize W/WSi bilayer gates, sidewall spacers, and rapid thermal annealing for controlling short channel effects. The 0.5 {mu}m E- HFETs (D-HFETs) have been demonstrated with transconductance of 425 mS/mm (265-310 mS/mm) and f{sub t} of 45-50 GHz. Ring oscillator gate delays of 19 ps with a power of 0.6 mW have been demonstrated using direct coupled FET logic. These results are comparable to previous doped-channel HFET devices and circuits fabricated by selective reactive ion etching rather than ion implantation for threshold voltage adjustment.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 459995
- Report Number(s):
- SAND-97-0384C; CONF-970517-4; ON: DE97003209
- Resource Relation:
- Conference: 191. meeting of the Electrochemical Society, Inc., Montreal (Canada), 4-9 May 1997; Other Information: PBD: [1997]
- Country of Publication:
- United States
- Language:
- English
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