Transport and localization in Nd{sub 1.82}Ce{sub 0.18}CuO{sub 4-{delta}} film
- Institute of Metal Physics, Ekaterinburg (Russian Federation); and others
Temperature- and magnetic-field-dependences of the resistivity {rho} and Hall effect R{sub H}(j{parallel}ab, B{parallel}c) in Nd{sub 1.82}Ce{sub 0.18}CuO{sub 4{minus}{delta}} single crystal film (T{sub c} = 6 K) were investigated at temperatures 1.4 {le} T {le} 20K and magnetic fields 0 {le} B {le} 5.5 T. At the lowest temperature T = 1.4 K the resistive state and Hall effect appear at the same magnetic field B = 0.5 T. A transition to the normal state is completed at B{sub c2} {approx_equal} 3T when a Hall coefficient becomes almost invariable. The negative magnetoresistance (d{rho}/dB < 0) at B > 3 T was observed also. The sign change of the temperature coefficient d{rho}/dT corresponds B = 1.06 T. This fact does not connect with transition in a new state but this is an accidental compensation of two factors: a decreasing of B{sub c2} with temperature and negative value d{rho}/dT in the normal state owing to weak localization effect.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 457257
- Report Number(s):
- CONF-960808--; CNN: Grant N93028
- Journal Information:
- Journal of Low Temperature Physics, Journal Name: Journal of Low Temperature Physics Journal Issue: 3-4 Vol. 105; ISSN JLTPAC; ISSN 0022-2291
- Country of Publication:
- United States
- Language:
- English
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