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Dependence of MOS-device radiation sensitivity on oxide impurities.

Journal Article · · IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-19: No. 6, 256-263(Dec 1972).
; ;
Research Organization:
Naval Research Lab., Washington, DC
Sponsoring Organization:
USDOE
NSA Number:
NSA-27-022578
OSTI ID:
4561480
Journal Information:
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-19: No. 6, 256-263(Dec 1972)., Journal Name: IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-19: No. 6, 256-263(Dec 1972).
Country of Publication:
Country unknown/Code not available
Language:
English

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Related Subjects

IMPURITIES
MOS TRANSISTORS
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
OXIDES
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES/radiation sensitivity of MOS
effects of oxide impurities on