Current crowding in hardened power transistors.
Journal Article
·
· IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-19: No. 6, 344-346(Dec 1972).
- Research Organization:
- Motorola Semiconductor Products Div., Phoenix, AZ
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-27-022590
- OSTI ID:
- 4561475
- Journal Information:
- IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-19: No. 6, 344-346(Dec 1972)., Other Information: See CONF-720707--. Orig. Receipt Date: 30-JUN-73
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
Radiation hardened bipolar high voltage power transistor. Final report, Apr 1971--Oct 1974
Optimized profiles for neutron and photocurrent hardened power transistors
Journal Article
·
Fri Oct 20 00:00:00 EDT 2017
· Applied Physics Letters
·
OSTI ID:4561475
+3 more
Radiation hardened bipolar high voltage power transistor. Final report, Apr 1971--Oct 1974
Technical Report
·
Thu Aug 01 00:00:00 EDT 1974
·
OSTI ID:4561475
Optimized profiles for neutron and photocurrent hardened power transistors
Conference
·
Sun Dec 01 00:00:00 EST 1974
· IEEE (Inst. Electr. Electron. Eng.) Trans. Nucl. Sci., v. NS-21, no. 6, pp. 149-151
·
OSTI ID:4561475