Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Zhang, Yuhao; Sun, Min; Piedra, Daniel; Hennig, Jonas; Dadgar, Armin; Palacios, Tomás

doi:10.1063/1.4989599

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Journal Article · Fri Oct 20 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4989599· OSTI ID:1400423

; Sun, Min; Piedra, Daniel; ; ; Palacios, Tomás

This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n−-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n+-GaN. The actual on-resistance of the drift region significantly depends on this current distribution rather than the intrinsic resistivity of the drift layer. As a result, the total specific on-resistance of quasi-vertical diodes shows a strong correlation with the device area and sheet resistance of the current spreading layer. By reducing the sheet resistance of the current spreading layer, the specific on-resistance of quasi-vertical GaN-on-Si power diodes has been reduced from ∼10 mΩ·cm2 to below 1 mΩ·cm2. Design space of the specific on-resistance at different breakdown voltage levels has also been revealed in optimized quasi-vertical GaN power diodes.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1400423

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 111; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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