CONTRIBUTION A L'ETUDE DU COMPORTEMENT DES TRANSISTORS SILICIUM A STRUCTURE PLANE SOUMIS AUX RAYONS ''GAMMA'' DU $sup 60$Co. (Contribution to the Study of the Behavior of Silicon Planar Transistors Exposed to the $sup 60$Co $gamma$ Rays). (in French)
Thesis/Dissertation
·
OSTI ID:4552000
- Research Organization:
- Commissariat a l'Energie Atomique, Saclay (France). Centre d'Etudes Nucleaires
- NSA Number:
- NSA-22-021402
- OSTI ID:
- 4552000
- Report Number(s):
- CEA-R--3313
- Country of Publication:
- France
- Language:
- French
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OSTI ID:4560007