Phase equilibria in the Ga{sub 2}O{sub 3}-In{sub 2}O{sub 3} system

Journal Article · Wed Jan 01 04:00:00 EST 1997 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/j.1151-2916.1997.tb02820.x· OSTI ID:455179

Edwards, D D; Folkins, P E; Mason, T O ^[1]

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1. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering

Subsolidus phase relationships in the Ga{sub 2}O{sub 3}-In{sub 2}O{sub 3} system were studies by X-ray diffraction and electron probe microanalysis (EPMA) for the temperature range of 800--1,400 C. The solubility limit of In{sub 2}O{sub 3} in the {beta}-gallia structure decreases with increasing temperature from 44.1 {+-} 0.5 mol% at 1,000 C to 41.4 {+-} 0.5 mol% at 1,400 C. The solubility limit of Ga{sub 2}O{sub 3} in cubic In{sub 2}O{sub 3} increases with temperature from 4.8 {+-} 0.5 mol% at 1,000 C to 10.0 {+-} 0.5 mol% at 1,400 C. The previously reported transparent conducting oxide phase in the Ga-In-O system cannot be GaInO{sub 3}, which is not stable, but is likely the In-doped {beta}-Ga{sub 2}O{sub 3} solid solution.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 455179
• Journal Information: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 1 Vol. 80; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EXPERIMENTAL DATA
GALLIUM OXIDES
INDIUM OXIDES
PHASE DIAGRAMS
PHASE STUDIES
SOLID SOLUTIONS
SOLUBILITY
TEMPERATURE RANGE 1000-4000 K
X-RAY DIFFRACTION