Electron cyclotron resonance plasma assisted sputter deposition of boron nitride films
- Department of Instrumentation, Indian Institute of Science, Bangalore 560012 (India)
Boron nitride films have been deposited on p-type silicon substrates by rf sputtering in the presence of an electron cyclotron resonance (ECR) plasma at a temperature of 450{degree}C. Structural phases were identified using IR spectroscopy and electrical characterization was carried out in the metal-insulator-semiconductor configuration. It was shown that the presence of ECR plasma enhanced the formation of cubic phase at substrate temperature as low as 450{degree}C, along with hexagonal phase. The dielectric constant was found to be 6{endash}8 and the resistivity was about 10{sup 12} {Omega}cm. The capacitance-voltage characteristics indicated good electronic interface with the presence of ECR plasma, with the density of states of about 1.18{times}10{sup 12} eV{sup {minus}1}cm{sup {minus}2}. The density of states was found to be higher by a factor of 2 in the absence of ECR plasma. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 450197
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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