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The effect of substrate temperature on material properties and the device performance of close-spaced sublimation deposited CdTe/CdS devices

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.49364· OSTI ID:450116
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  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

High-efficiency polycrystalline CdS/CdTe solar cells have been fabricated using CdTe absorber layers deposited by close-spaced sublimation (CSS). CSS employs high substrate temperatures ({ital T}{sub sub}) during film growth, which can promote the formation of larger grains and higher {ital V}{sub oc}{close_quote}s yielding better device performance. However, as {ital T}{sub sub} increases beyond 610{degree}C, voids or pinholes begin to form in the CdTe layer. When the back contact is applied, these voids serve as shunt paths that effectively lower {ital V}{sub oc}. In this fashion, benefits associated with higher substrate temperatures are seriously compromised. Concurrent with voiding is the observation that higher temperatures promote interdiffusion at the CdS/CdTe interface such that the effective thickness of the CdS layer is reduced. Variations in processing that correct for these detrimental effects have led to a total-area device efficiency of 12{percent}. {copyright} {ital 1996 American Institute of Physics.}

Sponsoring Organization:
USDOE
OSTI ID:
450116
Report Number(s):
CONF-9605265--
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 353; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English