CHANGE OF THE CONCENTRATION AND MOBILITY OF CHARGE CARRIERS IN GaAs ON IRRADIATION WITH PROTONS. (in German)
Journal Article
·
· Z. Naturforsch., 21a: 1057-71(July 1966).
OSTI ID:4477689
- Research Organization:
- Siemens-Schuckertwerke AG, Erlangen, Ger.
- NSA Number:
- NSA-21-003369
- OSTI ID:
- 4477689
- Journal Information:
- Z. Naturforsch., 21a: 1057-71(July 1966)., Other Information: Orig. Receipt Date: 31-DEC-67
- Country of Publication:
- Country unknown/Code not available
- Language:
- German
Similar Records
DEPENDENCE OF CHARGE CARRIER MOBILITY ON TEMPERATURE IN GaAs CRYSTALS IRRADIATED WITH FAST ELECTRONS.
Peculiarities of the change in the charge-carrier mobility in gallium arsenide after quenching and irradiation by fast electrons
Carrier concentration ratio and Hall mobility of semi-insulating GaAs upon photoexcitation and electron bombardment
Journal Article
·
Sat Jan 01 00:00:00 EST 1966
· Fiz. Tverd. Tela, 8: 3390-1(1966).
·
OSTI ID:4477689
+1 more
Peculiarities of the change in the charge-carrier mobility in gallium arsenide after quenching and irradiation by fast electrons
Journal Article
·
Fri Aug 01 00:00:00 EDT 1986
· Inorg. Mater. (Engl. Transl.); (United States)
·
OSTI ID:4477689
Carrier concentration ratio and Hall mobility of semi-insulating GaAs upon photoexcitation and electron bombardment
Journal Article
·
Wed Jan 01 00:00:00 EST 1975
· J. Appl. Phys., v. 46, no. 1, pp. 449-451
·
OSTI ID:4477689