Upconversion of near GaAs bandgap photons to GaInP{sub 2} emission at the GaAs/(ordered) GaInP{sub 2} heterojunction
Conference
·
OSTI ID:446408
- Univ. of California, Berkeley, CA (United States). Dept. of Physics
- Nippon Sanso Tsukuba Lab., Tsukuba City (Japan)
The authors have observed upconversion of photoluminescence in several partially ordered GaInP{sub 2} epilayers grown on [100] oriented GaAs substrates. They found that this upconversion occurs even when the excitation photon energy is below the bandgap of GaAs but near the electron-acceptor transitions at {approximately} 1.49 eV. A two-step two-photon absorption model in which the conduction band alignment at the GaAs/GaInP{sub 2} is of type 2 is proposed to explain the results.
- Research Organization:
- Lawrence Berkeley National Lab., CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 446408
- Report Number(s):
- LBNL--39427; CONF-960781--9; ON: DE97003402
- Country of Publication:
- United States
- Language:
- English
Similar Records
Spectroscopic study of partially-ordered semiconductor heterojunction under high pressure and high magnetic field
Addendum: Deep emission band at GaInP/GaAs interface
Photoluminescence and excitation-photoluminescence study of spontaneous ordering in GaInP[sub 2]
Conference
·
Sat Dec 30 23:00:00 EST 2000
·
OSTI ID:788070
Addendum: Deep emission band at GaInP/GaAs interface
Journal Article
·
Wed Oct 01 00:00:00 EDT 1997
· Journal of Applied Physics
·
OSTI ID:542555
Photoluminescence and excitation-photoluminescence study of spontaneous ordering in GaInP[sub 2]
Journal Article
·
Fri Jan 14 23:00:00 EST 1994
· Physical Review, B: Condensed Matter; (United States)
·
OSTI ID:5357090