Enchanced total dose damage in junction field effect transistors and related linear integrated circuits

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556905· OSTI ID:445478

Flament, O; Autran, J L; Roche, P; Leray, J L; Musseau, O ^[1]

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1. CEA, Bruyeres-le-Chatel (France). Centre d`Etudes de Bruyeres

Enhanced total dose damage of Junction Field-effect Transistors (JFETs) due to low dose rate and/or elevated temperature has been investigated for elementary p-channel structures fabricated on bulk and SOI substrates as well as for related linear integrated circuits. All these devices were fabricated with conventional junction isolation (field oxide). Large increases in damage have been revealed by performing high temperature and/or low dose rate irradiations. These results are consistent with previous studies concerning bipolar field oxides under low-field conditions. They suggest that the transport of radiation-induced holes through the oxide is the underlying mechanism. Such an enhanced degradation must be taken into account for low dose rate effects on linear integrated circuits.

• OSTI ID: 445478
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
TEMPERATURE DEPENDENCE