Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556889· OSTI ID:445462

Titus, J L ^[1]; Wheatley, C F ^[2]; Allenspach, M; Schrimpf, R D; Brews, J R; Galloway, K F ^[3]; Burton, D I ^[4]; Pease, R L ^[5]

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1. Naval Surface Warfare Center, Crane, IN (United States)
2. Wheatley (C.F.), Drums, PA (United States)
3. Univ. of Arizona, Tucson, AZ (United States)
4. Harris Semiconductor, Mountaintop, PA (United States)
5. RLP Research, Inc., Albuquerque, NM (United States)

For the first time, experimental observations and numerical simulations show that the impact energy of the test ion influences the single-event gate rupture (SEGR) failure thresholds of vertical power MOSFETs. Current testing methodology may produce false hardness assurance.

• Sponsoring Organization: National Aeronautics and Space Administration, Washington, DC (United States)
• OSTI ID: 445462
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ENERGY DEPENDENCE
EXPERIMENTAL DATA
FAILURES
MOSFET
PHYSICAL RADIATION EFFECTS
THEORETICAL DATA