Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy

Journal Article · Sat Feb 01 04:00:00 EST 1997 · IEEE Transactions on Electron Devices

OSTI ID:445408

Lin, R M; Tang, S F; Lee, S C; Kuan, C H ^[1]; Chen, G S; Sun, T P; Wu, J C ^[2]

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1. National Taiwan Univ., Taipei (Taiwan, Province of China). Dept. of Electrical Engineering
2. Chung Shan Inst. of Science and Technology, Long Tan (Taiwan, Province of China). Materials Research and Development Center

An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 {Omega}-cm{sup 2} at room temperature and as high as 1.3 M {Omega}-cm{sup 2} at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 {times} 10{sup 10} cm-Hz{sup 1/2}/W at room temperature and 8.1 {times} 10{sup 11} cm-Hz{sup 1/2}/W at 77 K. To their knowledge, this is the best data for a room temperature infrared detector.

• Sponsoring Organization: National Science Council, Taipei (Taiwan, Province of China)
• OSTI ID: 445408
• Journal Information: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 2 Vol. 44; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
AMBIENT TEMPERATURE
EXPERIMENTAL DATA
INDIUM ARSENIDES
INFRARED RADIATION
MOLECULAR BEAM EPITAXY
PERFORMANCE
PHOTODETECTORS
SEMICONDUCTOR DETECTORS